Enhanced charge storage performance in AlTi4Ox/Al2O3 multilayer charge trapping memory devices.

The charge-trapping memory devices with the structures p-Si/Al₂O₃/AlTi₄O_x/Al₂O₃/Pt were fabricated by using atomic layer deposition and RF magnetron sputtering techniques, and a memory window of 6.61 V and a high charge-trapping density of 1.29 × 10¹³ cm⁻² at gate voltage of ±11 V have been obtained. The remarkable charge-trapping effect in the high-k composite oxide layer was ascribed to the electron-occupied defect states formed by the inter-diffusion at the interface of TiO₂/Al₂O₃. An Al₂O₃ layer intercalated in the charge-trapping layer AlTi₄O_x enlarged the memory window to 14.59 V and also improved the data retention property by suppressing the vertical charge migration. [ABSTRACT FROM AUTHOR]