Enhanced charge storage performance in AlTi4Ox/Al2O3 multilayer charge trapping memory devices.

MLA

Changjie Gong, et al. “Enhanced Charge Storage Performance in AlTi4Ox/Al2O3 Multilayer Charge Trapping Memory Devices.” Japanese Journal of Applied Physics, vol. 53, no. 8S3, Aug. 2014, p. 1. EBSCOhost, https://doi.org/10.7567/JJAP.53.08NG02.

APA

Changjie Gong, Xin Ou, Bo Xu, Xuexin Lan, Yan Lei, Jianxin Lu, Yan Chen, Jiang Yin, Yidong Xia, Zhiguo Liu, Aidong Li, & Feng Yan. (2014). Enhanced charge storage performance in AlTi4Ox/Al2O3 multilayer charge trapping memory devices. Japanese Journal of Applied Physics, 53(8S3), 1. https://doi.org/10.7567/JJAP.53.08NG02

Chicago

Changjie Gong, Xin Ou, Bo Xu, Xuexin Lan, Yan Lei, Jianxin Lu, Yan Chen, et al. 2014. “Enhanced Charge Storage Performance in AlTi4Ox/Al2O3 Multilayer Charge Trapping Memory Devices.” Japanese Journal of Applied Physics 53 (8S3): 1. doi:10.7567/JJAP.53.08NG02.