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Amorphous SiN:H dielectrics with low density of defects.
- Source :
-
Applied Physics Letters . 11/10/1986, Vol. 49 Issue 19, p1272. 3p. - Publication Year :
- 1986
-
Abstract
- Amorphous SiNx:H films were prepared by rf glow discharge (GD) of SiH4-N2-H2 mixtures at 300 °C using a new decomposition technique. The optical gap Eg increases slowly with the ratio N2/SiH4 up to a critical gap Egc of 2.5–3.0 eV, and then rapidly increases up to 5.3 eV. The spin density Ns from electron spin resonance of Si dangling bonds increases with N2/SiH4 until Eg reaches Egc. Above Egc, Ns rapidly decreases in contrast with that of conventional GD films, but in similarity to pyrolytic films. The slope B in Tauc equation for optical absorption corresponds well with Ns. [ABSTRACT FROM AUTHOR]
- Subjects :
- *GLOW discharges
*THIN films
*ELECTRON paramagnetic resonance
*OPTICAL properties
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 49
- Issue :
- 19
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 9821349
- Full Text :
- https://doi.org/10.1063/1.97383