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The effect of a zinc–tin-oxide layer used as an etch-stopper layer on the bias stress stability of solution-processed indium–gallium–zinc-oxide thin-film transistors.
- Source :
-
Journal of Physics D: Applied Physics . 9/24/2014, Vol. 47 Issue 38, p1-1. 1p. - Publication Year :
- 2014
-
Abstract
- We investigated the bias stress stability of solution-processed indium–gallium–zinc-oxide thin-film transistors (IGZO TFTs) using zinc–tin-oxide (ZTO) as the etch-stopper layer, the so-called dual-active-layered ZTO/IGZO TFT (DALZI TFT). The DALZI TFT can use a low-cost back-channel-etch structure because of the high chemical stability of the upper ZTO layer. The DALZI TFT exhibited only a threshold voltage shift of −1.86 V under negative bias illumination stress (NBIS) conditions (stress time = 1000 s), while the unpassivated IGZO TFT suffered from a threshold voltage shift of −19.59 V under NBIS conditions (stress time = 1000 s). The superior bias stress stability of the DALZI TFT is attributed not only to the densification effect by the multi-stacking process but also to the lower sensitivity to ambient gases (e.g., oxygen and water vapour) due to the low oxygen vacancy in the upper ZTO layer. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00223727
- Volume :
- 47
- Issue :
- 38
- Database :
- Academic Search Index
- Journal :
- Journal of Physics D: Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 97824954
- Full Text :
- https://doi.org/10.1088/0022-3727/47/38/385104