Cite
The effect of a zinc–tin-oxide layer used as an etch-stopper layer on the bias stress stability of solution-processed indium–gallium–zinc-oxide thin-film transistors.
MLA
Chul Ho Kim, et al. “The Effect of a Zinc–tin-Oxide Layer Used as an Etch-Stopper Layer on the Bias Stress Stability of Solution-Processed Indium–gallium–zinc-Oxide Thin-Film Transistors.” Journal of Physics D: Applied Physics, vol. 47, no. 38, Sept. 2014, p. 1. EBSCOhost, https://doi.org/10.1088/0022-3727/47/38/385104.
APA
Chul Ho Kim, You Seung Rim, & Hyun Jae Kim. (2014). The effect of a zinc–tin-oxide layer used as an etch-stopper layer on the bias stress stability of solution-processed indium–gallium–zinc-oxide thin-film transistors. Journal of Physics D: Applied Physics, 47(38), 1. https://doi.org/10.1088/0022-3727/47/38/385104
Chicago
Chul Ho Kim, You Seung Rim, and Hyun Jae Kim. 2014. “The Effect of a Zinc–tin-Oxide Layer Used as an Etch-Stopper Layer on the Bias Stress Stability of Solution-Processed Indium–gallium–zinc-Oxide Thin-Film Transistors.” Journal of Physics D: Applied Physics 47 (38): 1. doi:10.1088/0022-3727/47/38/385104.