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Observing hot carrier distribution in an n-type epitaxial graphene on a SiC substrate.
- Source :
-
Applied Physics Letters . 4/21/2014, Vol. 104 Issue 16, p1-4. 4p. 4 Graphs. - Publication Year :
- 2014
-
Abstract
- Hot carrier dynamics in the Dirac band of n-type epitaxial graphene on a SiC substrate were traced in real time using femtosecond-time-resolved photoemission spectroscopy. The spectral evolution directly reflects the energetically linear density of states superimposed with a Fermi-Dirac distribution. The relaxation time is governed by the internal energy dissipation of electron-electron scattering, and the observed electronic temperature indicates cascade carrier multiplication. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 104
- Issue :
- 16
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 95775722
- Full Text :
- https://doi.org/10.1063/1.4871381