Observing hot carrier distribution in an n-type epitaxial graphene on a SiC substrate.

MLA

Someya, T., et al. “Observing Hot Carrier Distribution in an N-Type Epitaxial Graphene on a SiC Substrate.” Applied Physics Letters, vol. 104, no. 16, Apr. 2014, pp. 1–4. EBSCOhost, https://doi.org/10.1063/1.4871381.

APA

Someya, T., Fukidome, H., Ishida, Y., Yoshida, R., Iimori, T., Yukawa, R., Akikubo, K., Yamamoto, S., Yamamoto, S., Yamamoto, T., Kanai, T., Funakubo, K., Suemitsu, M., Itatani, J., Komori, F., Shin, S., & Matsuda, I. (2014). Observing hot carrier distribution in an n-type epitaxial graphene on a SiC substrate. Applied Physics Letters, 104(16), 1–4. https://doi.org/10.1063/1.4871381

Chicago

Someya, T., H. Fukidome, Y. Ishida, R. Yoshida, T. Iimori, R. Yukawa, K. Akikubo, et al. 2014. “Observing Hot Carrier Distribution in an N-Type Epitaxial Graphene on a SiC Substrate.” Applied Physics Letters 104 (16): 1–4. doi:10.1063/1.4871381.