Dislocation behavior in heavily germanium-doped silicon crystal

Dislocation-free heavily Ge-doped Czochralski (CZ)-Si crystal growth using a heavily Ge-doped Si seed has been investigated. Dislocations due to thermal shock were suppressed in a seed 7×7 mm2 in cross-section when Ge concentration in the seed exceeded 9×1019 atoms/cm3. When Ge concentration in the grown crystal was 5.7×1020 atoms/cm3, cellular growth occurred, and this concentration was a limit for heavily Ge-doped Si single crystal growth with a growth rate of about 1 mm/min. Resistivity in the crystal results in B or P doping could be controlled precisely in spite of using a heavily Ge-doped Si seed for growing a dislocation-free CZ-Si crystal without Dash necking. [Copyright &y& Elsevier]