Dislocation behavior in heavily germanium-doped silicon crystal

MLA

Taishi, Toshinori, et al. “Dislocation Behavior in Heavily Germanium-Doped Silicon Crystal.” Materials Science in Semiconductor Processing, vol. 5, no. 4/5, Aug. 2002, p. 409. EBSCOhost, https://doi.org/10.1016/S1369-8001(02)00128-2.

APA

Taishi, T., Huang, X., Yonenaga, I., & Hoshikawa, K. (2002). Dislocation behavior in heavily germanium-doped silicon crystal. Materials Science in Semiconductor Processing, 5(4/5), 409. https://doi.org/10.1016/S1369-8001(02)00128-2

Chicago

Taishi, Toshinori, Xinming Huang, Ichiro Yonenaga, and Keigo Hoshikawa. 2002. “Dislocation Behavior in Heavily Germanium-Doped Silicon Crystal.” Materials Science in Semiconductor Processing 5 (4/5): 409. doi:10.1016/S1369-8001(02)00128-2.