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Post Copper CMP Hybrid Clean Process for Advanced BEOL Technology.

Authors :
Tseng, Wei-Tsu
Devarapalli, Vamsi
Steffes, James
Ticknor, Adam
Khojasteh, Mahmoud
Poloju, Praneetha
Goyette, Colin
Steber, David
Tai, Leo
Molis, Steven
Zaitz, Mary
Rill, Elliott
Kennett, Michael
Economikos, Laertis
Lustig, Naftali
Bunke, Christine
Truong, Connie
Chudzik, Michael
Grunow, Stephan
Source :
IEEE Transactions on Semiconductor Manufacturing. Nov2013, Vol. 26 Issue 4, p493-499. 7p.
Publication Year :
2013

Abstract

A “hybrid” post Cu CMP cleaning process that combines acidic and basic clean in sequence is developed and implemented. The new process demonstrates the strengths of both acidic and basic cleans and achieves a more than 60% reduction in CMP defects, such as polish residues, foreign materials, slurry abrasives, scratches, and hollow metal, relative to an all-basic clean process. It also eliminates the circular ring defects that occur intermittently during roller brush cleans. TXRF scans confirm the reduction of AlOx defects when using the hybrid clean process. XPS spectra show similar Cu surface oxidation states between the basic and hybrid clean processes. As revealed by XRD analysis, surface Cu oxide is dissolved into aqueous solution by the acidic clean chemical. The formation mechanism of circular ring defects and the key to their elimination is discussed. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
08946507
Volume :
26
Issue :
4
Database :
Academic Search Index
Journal :
IEEE Transactions on Semiconductor Manufacturing
Publication Type :
Academic Journal
Accession number :
91789778
Full Text :
https://doi.org/10.1109/TSM.2013.2273124