Defects in silicon oxynitride films

Amorphous Si oxynitride (a-SiOxNy) films were deposited at 300 °C using a plasma-enhanced chemical vapor deposition technique, by varying the NH3 flow rate, [NH3], under fixed SiH4 and O2 flow rates to control the x- and y-values. The characteristics of defects were investigated vis-a`-vis structural and bonding properties. These films were ‘stoichiometric’, including no or less homobonds. As [NH3] increases, the x- and y-values decreased and increased, respectively, and a relationship of 2x+3y=4.14 (±0.02) was found. With increasing [NH3], the deposition rate increased, but the defect density and the stress can be decreased. [Copyright &y& Elsevier]