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Effects of deposition temperature on polycrystalline silicon films using plasma-enhanced chemical...
- Source :
-
Journal of Applied Physics . 7/1/1998, Vol. 84 Issue 1, p584. 5p. 1 Chart, 7 Graphs. - Publication Year :
- 1998
-
Abstract
- Provides information on a study examining the 200-nm-thick polycrystalline silicon films were deposited by changing the deposition temperature (Td = 150-750...C). Methodology used to conduct the study; Incorporation of O and N atoms depending on Td; Findings of the study.
- Subjects :
- *SILICON
*SCIENTIFIC experimentation
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 84
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 867783
- Full Text :
- https://doi.org/10.1063/1.368085