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Structure and grain boundary defects of recrystallized silicon films prepared from amorphus silicon deposited using disilane.
- Source :
-
Journal of Applied Physics . 3/1/1995, Vol. 77 Issue 5, p1938. 10p. 1 Chart, 13 Graphs. - Publication Year :
- 1995
-
Abstract
- Investigates the structure of polycrystalline silicon (Si) films prepared from amorphus silicon deposited using disilane. Factor attributed to the increase in the transmission electron microscopy size; Effects of post-hydrogenation on the poly-Si films; Description of structural properties.
- Subjects :
- *POLYCRYSTALLINE semiconductors
*SILICON
*TRANSMISSION electron microscopy
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 77
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7659666
- Full Text :
- https://doi.org/10.1063/1.358827