Cite
Structure and grain boundary defects of recrystallized silicon films prepared from amorphus silicon deposited using disilane.
MLA
Hasegawa, S., et al. “Structure and Grain Boundary Defects of Recrystallized Silicon Films Prepared from Amorphus Silicon Deposited Using Disilane.” Journal of Applied Physics, vol. 77, no. 5, Mar. 1995, p. 1938. EBSCOhost, https://doi.org/10.1063/1.358827.
APA
Hasegawa, S., Watanabe, S., Inokuma, T., & Kurata, Y. (1995). Structure and grain boundary defects of recrystallized silicon films prepared from amorphus silicon deposited using disilane. Journal of Applied Physics, 77(5), 1938. https://doi.org/10.1063/1.358827
Chicago
Hasegawa, S., S. Watanabe, T. Inokuma, and Y. Kurata. 1995. “Structure and Grain Boundary Defects of Recrystallized Silicon Films Prepared from Amorphus Silicon Deposited Using Disilane.” Journal of Applied Physics 77 (5): 1938. doi:10.1063/1.358827.