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Structure and grain boundary defects of glow-discharge polycrystalline silicon films deposited using disilane.
- Source :
-
Journal of Applied Physics . 1/1/1995, Vol. 77 Issue 1, p357. 10p. 1 Diagram, 12 Graphs. - Publication Year :
- 1995
-
Abstract
- Studies the structure and grain boundary defects of glow-discharge polycrystalline silicon films deposited using disilane. Deposition of poly-silicon films using monosilane; Significance of polycrystalline silicon films as a material for thin-film transistors; Examination of the morphology by means of x-ray diffraction using a diffractometer.
- Subjects :
- *SILICON
*GLOW discharges
*SILANE
*THIN film transistors
*X-ray diffractometers
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 77
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7659064
- Full Text :
- https://doi.org/10.1063/1.359330