In situ study of film stresses in metal silicides using absorption-edge-contour mapping.

Reports on the monitoring of the stresses present in palladium- and nickel-silicide thin films during deposition and subsequent annealing processes using the absorption-edge-contour mapping technique employing synchrotron radiation. Details on the experiment; Illustration of the fabrication chamber; Discussion on the origins of film stresses and the changes of stress magnitudes.