Luminescence of GaAs/(Al,Ga)As superlattices grown on Si substrates, containing a high density of threading dislocations: Strong effect of the superlattice period.

Presents information on a study which determined the materials quality of heavily dislocated epitaxial layers of gallium arsenide superlattices grown by molecular-beam epitaxy on silicon substrates. Insight on the presence of dislocations in semiconductors; Methodology of the study; Results and discussion.