Luminescence of GaAs/(Al,Ga)As superlattices grown on Si substrates, containing a high density of threading dislocations: Strong effect of the superlattice period.

MLA

Liu, T. Y., et al. “Luminescence of GaAs/(Al,Ga)As Superlattices Grown on Si Substrates, Containing a High Density of Threading Dislocations: Strong Effect of the Superlattice Period.” Journal of Applied Physics, vol. 64, no. 12, Dec. 1988, p. 6810. EBSCOhost, https://doi.org/10.1063/1.341994.

APA

Liu, T. Y., Petroff, P. M., & Kroemer, H. (1988). Luminescence of GaAs/(Al,Ga)As superlattices grown on Si substrates, containing a high density of threading dislocations: Strong effect of the superlattice period. Journal of Applied Physics, 64(12), 6810. https://doi.org/10.1063/1.341994

Chicago

Liu, T. Y., P. M. Petroff, and H. Kroemer. 1988. “Luminescence of GaAs/(Al,Ga)As Superlattices Grown on Si Substrates, Containing a High Density of Threading Dislocations: Strong Effect of the Superlattice Period.” Journal of Applied Physics 64 (12): 6810. doi:10.1063/1.341994.