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Effects of active hydrogen on the stress relaxation of amorphous SiNx:H films.
- Source :
-
Journal of Applied Physics . 2/1/1994, Vol. 75 Issue 3, p1493. 8p. 1 Chart, 11 Graphs. - Publication Year :
- 1994
-
Abstract
- Presents a study which investigated the stress in plasma-enhanced chemical vapor deposition hydrogenated amorphous silicon nitrogen[subx] films. Experimental details; Results and discussion; Conclusion.
- Subjects :
- *STRAINS & stresses (Mechanics)
*PLASMA gases
*CHEMICAL vapor deposition
*SILICON
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 75
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7650559
- Full Text :
- https://doi.org/10.1063/1.356384