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Relationship between the stress and bonding properties of amorphous SiNx:H films.

Authors :
Hasegawa, S.
Amano, Y.
Inokuma, T.
Kurata, Y.
Source :
Journal of Applied Physics. 12/15/1992, Vol. 72 Issue 12, p5676. 6p. 2 Charts, 7 Graphs.
Publication Year :
1992

Abstract

Reports on the relationship between the stress and bonding properties of amorphous SiN[subx]:H films. Deposition of amorphous SiN[subx]:H films on single crystal silicon; Significance of amorphous SiN[subx]:H films deposited by plasma-enhanced chemical vapor deposition; Densities of the SiH and NH bonds.

Details

Language :
English
ISSN :
00218979
Volume :
72
Issue :
12
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7628283
Full Text :
https://doi.org/10.1063/1.351917