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Liquid junctions for characterization of electronic materials. III. Modulation spectroscopies of reactive ion etching of Si.

Authors :
Shen, Wu-mian
Fantini, M. C. A.
Pollak, Fred H.
Tomkiewicz, Micha
Leary, Herbert J.
Gambino, J. P.
Source :
Journal of Applied Physics. 8/15/1989, Vol. 66 Issue 4, p1765. 7p.
Publication Year :
1989

Abstract

Investigates photoreflectance, electrolyte photoreflectance (PR) and electrolyte electroreflectance (EER) for various reactive ion etching treatments of n-silicon. Use of modulation spectroscopy; Dependence of the amplitude of the EER transition on the electrode potential for untreated silicon; Low-field limit of EER and PR.

Details

Language :
English
ISSN :
00218979
Volume :
66
Issue :
4
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7626480
Full Text :
https://doi.org/10.1063/1.344367