Annealing effect of low-temperature (<150°C) Cat-CVD gate dielectric silicon nitride films diluted with atomic hydrogen.

The article details a study on how the properties of silicon nitride (SiNx) thin films are being affected by in-situ hydrogen pretreatment. In this study, the thin films were grown by Catalytic Chemical Vapor Deposition (CVD) at a temperature of150 degrees Celcius. The study concludes that SiNx can be produced successfully with hydrogen dilution of the source gas combined with in-situ hydrogen treatment.