Annealing effect of low-temperature (<150°C) Cat-CVD gate dielectric silicon nitride films diluted with atomic hydrogen.

MLA

Ki-Su Keum, et al. “Annealing Effect of Low-Temperature (<150°C) Cat-CVD Gate Dielectric Silicon Nitride Films Diluted with Atomic Hydrogen.” Journal of the Society for Information Display, vol. 19, no. 9, Sept. 2011, pp. 623–26. EBSCOhost, https://doi.org/10.1889/JSID19.9.623.

APA

Ki-Su Keum, Kyoung-Min Lee, Jae-Dam Hwang, Kil-Sun No, & Wan-Shick Hong. (2011). Annealing effect of low-temperature (<150°C) Cat-CVD gate dielectric silicon nitride films diluted with atomic hydrogen. Journal of the Society for Information Display, 19(9), 623–626. https://doi.org/10.1889/JSID19.9.623

Chicago

Ki-Su Keum, Kyoung-Min Lee, Jae-Dam Hwang, Kil-Sun No, and Wan-Shick Hong. 2011. “Annealing Effect of Low-Temperature (<150°C) Cat-CVD Gate Dielectric Silicon Nitride Films Diluted with Atomic Hydrogen.” Journal of the Society for Information Display 19 (9): 623–26. doi:10.1889/JSID19.9.623.