Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses.

The admittance characteristics of a well understood oxide system of Gd0.25 Ga0.15 O0.60/Ga2 O3 on In0.53 Ga0.47As are studied at low temperature where the majority of the defect states are frozen. The capacitance-voltage (C-V) characteristics are broadened beyond those expected for an ideal sample. The broadening is ascribed to the presence of a non-uniform surface potential. We report a simple method for measuring the surface potential distribution width using the ac signal amplitude dependence of the C-V profile. A distribution of surface potentials can explain the observed behavior, but only if it includes the admittance of the semiconductor. This is in contrast to the usual approximation that the effect of a distribution of surface potentials on the admittance of the semiconductor is ignored. It is found that the charge state of defect states in the oxide and variation in the doping density of the substrate contribute to the broadening. The implications for inclusion of the semiconductor admittance for the interpretation of ideal characteristics and for the analysisof characteristics with interface states are explored. Both the conductance method and the quasi-equilibrium C-V methods are affected to some extent. An alternative method that can more accurately extract information from the admittance characteristics of the MOS samples is proposed. [ABSTRACT FROM AUTHOR]