Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses.

MLA

Paterson, G. W., et al. “Broadening of Metal-Oxide-Semiconductor Admittance Characteristics: Measurement, Sources, and Its Effects on Interface State Density Analyses.” Journal of Applied Physics, vol. 110, no. 11, Dec. 2011, p. 114115. EBSCOhost, https://doi.org/10.1063/1.3665720.

APA

Paterson, G. W., Holland, M. C., Thayne, I. G., & Long, A. R. (2011). Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses. Journal of Applied Physics, 110(11), 114115. https://doi.org/10.1063/1.3665720

Chicago

Paterson, G. W., M. C. Holland, I. G. Thayne, and A. R. Long. 2011. “Broadening of Metal-Oxide-Semiconductor Admittance Characteristics: Measurement, Sources, and Its Effects on Interface State Density Analyses.” Journal of Applied Physics 110 (11): 114115. doi:10.1063/1.3665720.