Mechanism of film growth of pulsed electrodeposition of nanocrystalline copper in presence of thiourea.

This article reports the effect of addition of small amount of thiourea on mechanism of film growth, levelling and grain refinement of pulsed electrodeposition of nanocrystalline copper on stainless steel substrate using simple aqueous acidic copper sulphate solution prepared from 0.25 M CuSO·5HO and 0.5 M HSO. The amount of thiourea used in the electrolyte is 0 and 36 mg/l. The results indicate the change in morphology of the deposits with addition of thiourea leading to dendrite free copper deposits. The growth mechanism of the copper deposition is found to change from Volmer-Weber type to Frank-Vander Merwe type making the deposits smoother when deposited with thiourea addition. A small amount (36 mg/l) of thiourea addition leads to decrease in the average grain size of copper from 1160 nm to 14 nm. The results clearly reveal the formation of nanocrystalline copper by addition of thiourea with three orders of magnitude reduction in grain size as compared to the sample deposited without thiourea. Preferential segregation of sulphur (present in thiourea) along the grain boundaries of nanocrystalline copper is shown by energy filter imaging using ultra high resolution transmission electron microscope (TEM), thereby restricting the growth of copper grains during pulsed electrodeposition. [ABSTRACT FROM AUTHOR]