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New mechanism of plasma induced damage on CMOS image sensor: Analysis and process optimization
- Source :
-
Solid-State Electronics . Nov2011, Vol. 65-66, p51-56. 6p. - Publication Year :
- 2011
-
Abstract
- Abstract: A new plasma induced damage mechanism on CMOS image sensor is analyzed. An increase of the mean pixel dark current is observed after the plasma etch of a cavity on the pixel area. The degradation increases non-linearly when the dielectric layers between the photodiode and the plasma become thinner. This can be explained by a photo generation phenomenon in the dielectric nitride layer, induced by the plasma UV, and assisted by the wafer surface charge. This mechanism leads to the creation of a positive fixed charge on the pixel surface, which can next deplete the top P layer of the pinned photodiode. The temperature dependence of the dark current again demonstrates that the degradation is mainly due to a diode surface generation effect. Process and pixel architecture optimization are finally proposed. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 00381101
- Volume :
- 65-66
- Database :
- Academic Search Index
- Journal :
- Solid-State Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 66733233
- Full Text :
- https://doi.org/10.1016/j.sse.2011.06.037