New mechanism of plasma induced damage on CMOS image sensor: Analysis and process optimization

MLA

Carrère, J. P., et al. “New Mechanism of Plasma Induced Damage on CMOS Image Sensor: Analysis and Process Optimization.” Solid-State Electronics, vol. 65–66, Nov. 2011, pp. 51–56. EBSCOhost, https://doi.org/10.1016/j.sse.2011.06.037.

APA

Carrère, J. P., Oddou, J. P., Place, S., Richard, C., Benoit, D., Jenny, C., Gatefait, M., Aumont, C., Tournier, A., & Roy, F. (2011). New mechanism of plasma induced damage on CMOS image sensor: Analysis and process optimization. Solid-State Electronics, 65–66, 51–56. https://doi.org/10.1016/j.sse.2011.06.037

Chicago

Carrère, J.P., J.P. Oddou, S. Place, C. Richard, D. Benoit, C. Jenny, M. Gatefait, C. Aumont, A. Tournier, and F. Roy. 2011. “New Mechanism of Plasma Induced Damage on CMOS Image Sensor: Analysis and Process Optimization.” Solid-State Electronics 65–66 (November): 51–56. doi:10.1016/j.sse.2011.06.037.