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Enhanced electrostatic discharge properties of nitride-based light-emitting diodes with inserting Si-delta-doped layers.
- Source :
-
Applied Physics Letters . 9/12/2011, Vol. 99 Issue 11, p111109. 3p. 1 Color Photograph, 1 Chart, 4 Graphs. - Publication Year :
- 2011
-
Abstract
- We report significantly improved electrostatic discharge (ESD) properties of InGaN/GaN-based light-emitting diodes (LEDs) with inserting Si-delta-doped layers between multiple quantum wells and n-cladding layer. The ESD endurance voltage increased from -1200 V to -4000 V with the insertion of delta-doped layers. The mechanism of the enhanced ESD properties was then investigated. According to capacitance-voltage results, the factor of capacitance modulation was ruled out. However, infrared microscopy image proved better current spreading in the LEDs with delta-doped layers. In addition, current-voltage, photoluminescence, and atomic force microscope measurements demonstrated substantial quality improvements. These two reasons were considered as the dominant mechanisms of the enhanced ESD properties. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 99
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 65503728
- Full Text :
- https://doi.org/10.1063/1.3637599