Cite
Enhanced electrostatic discharge properties of nitride-based light-emitting diodes with inserting Si-delta-doped layers.
MLA
Zheng, Zhiyuan, et al. “Enhanced Electrostatic Discharge Properties of Nitride-Based Light-Emitting Diodes with Inserting Si-Delta-Doped Layers.” Applied Physics Letters, vol. 99, no. 11, Sept. 2011, p. 111109. EBSCOhost, https://doi.org/10.1063/1.3637599.
APA
Zheng, Z., Chen, Z., Xian, Y., Fan, B., Huang, S., Jia, W., Wu, Z., Wang, G., & Jiang, H. (2011). Enhanced electrostatic discharge properties of nitride-based light-emitting diodes with inserting Si-delta-doped layers. Applied Physics Letters, 99(11), 111109. https://doi.org/10.1063/1.3637599
Chicago
Zheng, Zhiyuan, Zimin Chen, Yulun Xian, Bingfeng Fan, Shanjin Huang, Weiqing Jia, Zhisheng Wu, Gang Wang, and Hao Jiang. 2011. “Enhanced Electrostatic Discharge Properties of Nitride-Based Light-Emitting Diodes with Inserting Si-Delta-Doped Layers.” Applied Physics Letters 99 (11): 111109. doi:10.1063/1.3637599.