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Influence of the sidewall crystal orientation, HfSiO nitridation and TiN metal gate thickness on n-MuGFETs under analog operation
- Source :
-
Solid-State Electronics . Aug2011, Vol. 62 Issue 1, p146-151. 6p. - Publication Year :
- 2011
-
Abstract
- Abstract: This work characterizes the analog performance of SOI n-MuGFETs with HfSiO gate dielectric and TiN metal gate with respect to the influence of the high-k post-nitridation, TiN thickness and device rotation. A thinner TiN metal gate is found favorable for improved analog characteristics showing an increase in intrinsic voltage gain. The devices where the high-k material is subjected to a nitridation step indicated a degradation of the Early voltage (V EA) values which resulted in a lower voltage gain. The 45° rotated devices have a smaller V EA than the standard ones when a HfSiO dielectric is used. However, the higher transconductance of these devices, due to the increased mobility in the (100) sidewall orientation, compensates this V EA degradation of the voltage gain, keeping it nearly equal to the voltage gain values of the standard devices. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 00381101
- Volume :
- 62
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Solid-State Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 61176496
- Full Text :
- https://doi.org/10.1016/j.sse.2011.04.002