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Influence of the sidewall crystal orientation, HfSiO nitridation and TiN metal gate thickness on n-MuGFETs under analog operation

Authors :
Rodrigues, M.
Galeti, M.
Martino, J.A.
Collaert, N.
Simoen, E.
Claeys, C.
Source :
Solid-State Electronics. Aug2011, Vol. 62 Issue 1, p146-151. 6p.
Publication Year :
2011

Abstract

Abstract: This work characterizes the analog performance of SOI n-MuGFETs with HfSiO gate dielectric and TiN metal gate with respect to the influence of the high-k post-nitridation, TiN thickness and device rotation. A thinner TiN metal gate is found favorable for improved analog characteristics showing an increase in intrinsic voltage gain. The devices where the high-k material is subjected to a nitridation step indicated a degradation of the Early voltage (V EA) values which resulted in a lower voltage gain. The 45° rotated devices have a smaller V EA than the standard ones when a HfSiO dielectric is used. However, the higher transconductance of these devices, due to the increased mobility in the (100) sidewall orientation, compensates this V EA degradation of the voltage gain, keeping it nearly equal to the voltage gain values of the standard devices. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
00381101
Volume :
62
Issue :
1
Database :
Academic Search Index
Journal :
Solid-State Electronics
Publication Type :
Academic Journal
Accession number :
61176496
Full Text :
https://doi.org/10.1016/j.sse.2011.04.002