Cite

Influence of the sidewall crystal orientation, HfSiO nitridation and TiN metal gate thickness on n-MuGFETs under analog operation

MLA

Rodrigues, M., et al. “Influence of the Sidewall Crystal Orientation, HfSiO Nitridation and TiN Metal Gate Thickness on n-MuGFETs under Analog Operation.” Solid-State Electronics, vol. 62, no. 1, Aug. 2011, pp. 146–51. EBSCOhost, https://doi.org/10.1016/j.sse.2011.04.002.



APA

Rodrigues, M., Galeti, M., Martino, J. A., Collaert, N., Simoen, E., & Claeys, C. (2011). Influence of the sidewall crystal orientation, HfSiO nitridation and TiN metal gate thickness on n-MuGFETs under analog operation. Solid-State Electronics, 62(1), 146–151. https://doi.org/10.1016/j.sse.2011.04.002



Chicago

Rodrigues, M., M. Galeti, J.A. Martino, N. Collaert, E. Simoen, and C. Claeys. 2011. “Influence of the Sidewall Crystal Orientation, HfSiO Nitridation and TiN Metal Gate Thickness on n-MuGFETs under Analog Operation.” Solid-State Electronics 62 (1): 146–51. doi:10.1016/j.sse.2011.04.002.