Estudio Comparativo de la Densidad de Estados en Muestras de Silicio Microcristalino Obtenida a Través del Método de Conductividad Térmicamente Estimulada y Técnicas de Fotoconductividad Modulada.

In this work density of states (DOS) was obtained on boron-doped microcrystalline silicon samples [µc-Si:H (B)] from the thermally stimulated conductivity (TSC) technique and compared with results obtained by the modulated photoconductivity methods. To explain the poor agreement between the DOS obtained from the TSC and the other methods, it is shown by means of numerical simulations that the DOS is very sensitive to experimental errors introduced in the calculation of the µnτn product (mobility of electron x lifetime of the electron). The TSC method is applied here for the first time to calculate the density of defect states in the forbidden band of µc-Si:H samples. [ABSTRACT FROM AUTHOR]