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Misorientation-angle dependence of GaN layers grown on a-plane sapphire substrates by metalorganic chemical vapor deposition.
- Source :
-
Applied Physics Letters . 9/24/2001, Vol. 79 Issue 13. 1 Diagram, 3 Graphs. - Publication Year :
- 2001
-
Abstract
- High-quality GaN with smooth surface morphology has been grown on vicinal a-plane sapphire substrates by metalorganic chemical vapor deposition. The misorientation angles of vicinal a-plane sapphire substrates were changed systematically and the results were compared with the growth on exact a- and c-plane sapphire substrates. Surface morphology and crystalline qualities are found to be very sensitive to misorientation angles of a-plane sapphire substrates and the misorientation angle was optimized to be 0.25°. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 79
- Issue :
- 13
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 5193918
- Full Text :
- https://doi.org/10.1063/1.1402636