Cite
Misorientation-angle dependence of GaN layers grown on a-plane sapphire substrates by metalorganic chemical vapor deposition.
MLA
Someya, T., et al. “Misorientation-Angle Dependence of GaN Layers Grown on a-Plane Sapphire Substrates by Metalorganic Chemical Vapor Deposition.” Applied Physics Letters, vol. 79, no. 13, Sept. 2001. EBSCOhost, https://doi.org/10.1063/1.1402636.
APA
Someya, T., Hoshino, K., & Arakawa, Y. (2001). Misorientation-angle dependence of GaN layers grown on a-plane sapphire substrates by metalorganic chemical vapor deposition. Applied Physics Letters, 79(13). https://doi.org/10.1063/1.1402636
Chicago
Someya, T., K. Hoshino, and Y. Arakawa. 2001. “Misorientation-Angle Dependence of GaN Layers Grown on a-Plane Sapphire Substrates by Metalorganic Chemical Vapor Deposition.” Applied Physics Letters 79 (13). doi:10.1063/1.1402636.