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Normal incidence p–i–n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition
- Source :
-
Optics Communications . Sep2010, Vol. 283 Issue 18, p3404-3407. 4p. - Publication Year :
- 2010
-
Abstract
- Abstract: We report on normal incidence p–i–n heterojunction photodiodes operating in the near-infrared region and realized in pure germanium on planar silicon substrate. The diodes were fabricated by ultrahigh vacuum chemical vapor deposition at 600°C without thermal annealing and allowing the integration with standard silicon processes. Due to the 0.14% residual tensile strain generated by the thermal expansion mismatch between Ge and Si, an efficiency enhancement of nearly 3-fold at 1.55μm and the absorption edge shifting to longer wavelength of about 40nm are achieved in the epitaxial Ge films. The diode with a responsivity of 0.23A/W at 1.55μm wavelength and a bulk dark current density of 10mA/cm2 is demonstrated. These diodes with high performances and full compatibility with the CMOS processes enable monolithically integrating microphotonics and microelectronics on the same chip. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 00304018
- Volume :
- 283
- Issue :
- 18
- Database :
- Academic Search Index
- Journal :
- Optics Communications
- Publication Type :
- Academic Journal
- Accession number :
- 51848366
- Full Text :
- https://doi.org/10.1016/j.optcom.2010.04.098