Cite
Normal incidence p–i–n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition
MLA
Zhou, Zhiwen, et al. “Normal Incidence P–i–n Ge Heterojunction Photodiodes on Si Substrate Grown by Ultrahigh Vacuum Chemical Vapor Deposition.” Optics Communications, vol. 283, no. 18, Sept. 2010, pp. 3404–07. EBSCOhost, https://doi.org/10.1016/j.optcom.2010.04.098.
APA
Zhou, Z., He, J., Wang, R., Li, C., & Yu, J. (2010). Normal incidence p–i–n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition. Optics Communications, 283(18), 3404–3407. https://doi.org/10.1016/j.optcom.2010.04.098
Chicago
Zhou, Zhiwen, Jingkai He, Ruichun Wang, Cheng Li, and Jinzhong Yu. 2010. “Normal Incidence P–i–n Ge Heterojunction Photodiodes on Si Substrate Grown by Ultrahigh Vacuum Chemical Vapor Deposition.” Optics Communications 283 (18): 3404–7. doi:10.1016/j.optcom.2010.04.098.