Electrical characteristics of plasma oxidized Si[sub 1-x-y]Ge[sub x]C[sub y] metal–oxide–semiconductor capacitors.

Microwave plasma oxidation (below 200 °C) of partially strain-compensated Si[sub 1-x-y]Ge[sub x]C[sub y] (Ge:C=20:1 and 40:1) with and without a Si cap layer is reported. The electrical properties of grown oxides have been characterized using a metal–oxide–semiconductor structure. Fixed oxide charge density and mid-gap interface trap density are found to be 2.9×10[sup 11]/cm[sup 2] and 8.8×10[sup 11]/cm[sup 2]/eV, respectively, for directly oxidized Si[sub 0.79]Ge[sub 0.2]C[sub 0.01] film. The oxide on samples with low C (0.5%) concentration, exhibits hole trapping, whereas electron trapping is observed for oxides on alloys containing 1% C. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR]