Electrical characteristics of plasma oxidized Si[sub 1-x-y]Ge[sub x]C[sub y] metal–oxide–semiconductor capacitors.

MLA

Ray, S. K., et al. “Electrical Characteristics of Plasma Oxidized Si[Sub 1-x-y]Ge[Sub x]C[Sub y] Metal–oxide–semiconductor Capacitors.” Applied Physics Letters, vol. 72, no. 10, Mar. 1998. EBSCOhost, https://doi.org/10.1063/1.121028.

APA

Ray, S. K., Bera, L. K., Maiti, C. K., John, S., & Banerjee, S. K. (1998). Electrical characteristics of plasma oxidized Si[sub 1-x-y]Ge[sub x]C[sub y] metal–oxide–semiconductor capacitors. Applied Physics Letters, 72(10). https://doi.org/10.1063/1.121028

Chicago

Ray, S. K., L. K. Bera, C. K. Maiti, S. John, and S. K. Banerjee. 1998. “Electrical Characteristics of Plasma Oxidized Si[Sub 1-x-y]Ge[Sub x]C[Sub y] Metal–oxide–semiconductor Capacitors.” Applied Physics Letters 72 (10). doi:10.1063/1.121028.