Back to Search
Start Over
The Role of Irradiation Bias on the Time-Dependent Dielectric Breakdown of 1 30-nm MOSFETs Exposed to X-rays.
- Source :
-
IEEE Transactions on Nuclear Science . Dec2009 Part 1 of 2, Vol. 56 Issue 6, p3244-3249. 6p. - Publication Year :
- 2009
-
Abstract
- We have investigated the effects of biased and unbiased X-ray irradiation on the subsequent time-dependent dielectric breakdown (TDDB) of 130-nm MOSFETs irradiated up to 1 Mrad(SiO2). We found a small but measurable increase in TDDB lifetime after irradiation at the worst-case irradiation bias. The influence of radiation bias on subsequent TDDB is more significant in the PMOSFETs than the NMOSFETs. The increased TDDB lifetime and the irradiation-bias dependence are attributed to the influence of radiation-induced traps on the stressing current during the reliability testing. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 56
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 47438825
- Full Text :
- https://doi.org/10.1109/TNS.2009.2033360