Cite
The Role of Irradiation Bias on the Time-Dependent Dielectric Breakdown of 1 30-nm MOSFETs Exposed to X-rays.
MLA
Silvestri, Marco, et al. “The Role of Irradiation Bias on the Time-Dependent Dielectric Breakdown of 1 30-Nm MOSFETs Exposed to X-Rays.” IEEE Transactions on Nuclear Science, vol. 56, no. 6, Dec. 2009, pp. 3244–49. EBSCOhost, https://doi.org/10.1109/TNS.2009.2033360.
APA
Silvestri, M., Gerardin, S., Schrimpf, R. D., Fleetwood, D. M., Faccio, F., & Paccagnella, A. (2009). The Role of Irradiation Bias on the Time-Dependent Dielectric Breakdown of 1 30-nm MOSFETs Exposed to X-rays. IEEE Transactions on Nuclear Science, 56(6), 3244–3249. https://doi.org/10.1109/TNS.2009.2033360
Chicago
Silvestri, Marco, Simone Gerardin, Ronald D. Schrimpf, Daniel M. Fleetwood, Federico Faccio, and Alessandro Paccagnella. 2009. “The Role of Irradiation Bias on the Time-Dependent Dielectric Breakdown of 1 30-Nm MOSFETs Exposed to X-Rays.” IEEE Transactions on Nuclear Science 56 (6): 3244–49. doi:10.1109/TNS.2009.2033360.