Back to Search
Start Over
Second-Bit-Effect-Free Multibit-Cell Flash Memory Using Si3N4/ZrO2 Split Charge Trapping Layer.
- Source :
-
IEEE Transactions on Electron Devices . Sep2009, Vol. 56 Issue 9, p1966-1973. 8p. 5 Diagrams, 2 Charts, 3 Graphs. - Publication Year :
- 2009
-
Abstract
- In this paper, a Si3N4/ZrO2 split charge trapping layer (SCTL) is proposed for multibit-cell Flash memory. T complementary potential wells of Si3N4/ZrO2 storage nodes en able independent node control when the Fowler-Nordheim (F-N) method is applied for programming/erasing (P/E). Experiment and simulation results suggest that the 2-bit (2-b) charge storage is accomplished by physical data node separation for the SCTL rather than charge injection control. The well-confined charge storages suppress the second-bit effect, enabling excellent 2-b data clearance for short-channel SCTL devices. It was found that the remaining memory windows after 1010 s decrease, dependent on the difference of the trap properties between Si3N4 and ZrO2. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 56
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 44521527
- Full Text :
- https://doi.org/10.1109/TED.2009.2026090