Cite
Second-Bit-Effect-Free Multibit-Cell Flash Memory Using Si3N4/ZrO2 Split Charge Trapping Layer.
MLA
Gang Zhang, et al. “Second-Bit-Effect-Free Multibit-Cell Flash Memory Using Si3N4/ZrO2 Split Charge Trapping Layer.” IEEE Transactions on Electron Devices, vol. 56, no. 9, Sept. 2009, pp. 1966–73. EBSCOhost, https://doi.org/10.1109/TED.2009.2026090.
APA
Gang Zhang, Seung-Hwan Lee, Chang Ho Ra, Hua-Min L, & Won Jong Yoo. (2009). Second-Bit-Effect-Free Multibit-Cell Flash Memory Using Si3N4/ZrO2 Split Charge Trapping Layer. IEEE Transactions on Electron Devices, 56(9), 1966–1973. https://doi.org/10.1109/TED.2009.2026090
Chicago
Gang Zhang, Seung-Hwan Lee, Chang Ho Ra, Hua-Min L, and Won Jong Yoo. 2009. “Second-Bit-Effect-Free Multibit-Cell Flash Memory Using Si3N4/ZrO2 Split Charge Trapping Layer.” IEEE Transactions on Electron Devices 56 (9): 1966–73. doi:10.1109/TED.2009.2026090.