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Gettering of copper to hydrogen-induced cavities in silicon.
- Source :
-
Applied Physics Letters . 3/6/1995, Vol. 66 Issue 10, p1231. 3p. 1 Diagram, 4 Graphs. - Publication Year :
- 1995
-
Abstract
- Examines gettering of copper (Cu) to the cavities in silicon (Si) formed by hydrogen (H) implantation and annealing. Redistribution of Cu with increasing temperature; Effects of H+Cu annealing on temperature; Dissolution of implanted Cu in Si wafer.
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 66
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4203959
- Full Text :
- https://doi.org/10.1063/1.113246