One-sidewall-seeded epitaxial lateral overgrowth of a-plane GaN by metalorganic vapor-phase epitaxy

Abstract: The selective regrowth of GaN during sidewall-seeded epitaxial lateral overgrowth was performed. In addition to adjusting the V/III ratio, control of offset angle of the sidewall was found to be effective for realizing one-sidewall-seeded a-plane (112¯0) GaN on r-plane (11¯02) sapphire. The number of coalescence regions on the grooves was reduced, and threading-dislocation and stacking-fault densities as low as 106–107 cm−2 and 103–104 cm−1, respectively, were successfully realized. [Copyright &y& Elsevier]