One-sidewall-seeded epitaxial lateral overgrowth of a-plane GaN by metalorganic vapor-phase epitaxy

MLA

Iida, Daisuke, et al. “One-Sidewall-Seeded Epitaxial Lateral Overgrowth of a-Plane GaN by Metalorganic Vapor-Phase Epitaxy.” Journal of Crystal Growth, vol. 311, no. 10, May 2009, pp. 2887–90. EBSCOhost, https://doi.org/10.1016/j.jcrysgro.2009.01.036.

APA

Iida, D., Iwaya, M., Kamiyama, S., Amano, H., & Akasaki, I. (2009). One-sidewall-seeded epitaxial lateral overgrowth of a-plane GaN by metalorganic vapor-phase epitaxy. Journal of Crystal Growth, 311(10), 2887–2890. https://doi.org/10.1016/j.jcrysgro.2009.01.036

Chicago

Iida, Daisuke, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, and Isamu Akasaki. 2009. “One-Sidewall-Seeded Epitaxial Lateral Overgrowth of a-Plane GaN by Metalorganic Vapor-Phase Epitaxy.” Journal of Crystal Growth 311 (10): 2887–90. doi:10.1016/j.jcrysgro.2009.01.036.