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Accurate Litho Model Tuning Using Design-Based Defect Binning.

Accurate Litho Model Tuning Using Design-Based Defect Binning.

Authors :
Vasek, Jim
Svidenko, Vicky
Nehmadi, Youval
Shimshi, Rinat
Source :
IEEE Transactions on Semiconductor Manufacturing. Aug2008, Vol. 21 Issue 3, p316-321. 6p. 4 Black and White Photographs, 2 Diagrams, 7 Graphs.
Publication Year :
2008

Abstract

Advanced lithography optical proximity correction (OPC) techniques rely on accurately tuned process models. Although through-process OPC models are being used for critical layers at the 65-nm node, typically an initial model is created at a single optimized process setting. Such "best condition" models often produce process-window limiting structures that can impact yield. A new methodology is presented for identifying misprinted structures during the qualification of a new photomask and optimizing the process model based on those structures. Instead of the traditional approach which employs repeater analysis, the new technique bins the process-limiting structures according to their design. This method enables efficient data reduction and identification of a new feature set for lithography process model tuning. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
08946507
Volume :
21
Issue :
3
Database :
Academic Search Index
Journal :
IEEE Transactions on Semiconductor Manufacturing
Publication Type :
Academic Journal
Accession number :
34138376
Full Text :
https://doi.org/10.1109/TSM.2008.2001204