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Accurate Litho Model Tuning Using Design-Based Defect Binning.
Accurate Litho Model Tuning Using Design-Based Defect Binning.
- Source :
-
IEEE Transactions on Semiconductor Manufacturing . Aug2008, Vol. 21 Issue 3, p316-321. 6p. 4 Black and White Photographs, 2 Diagrams, 7 Graphs. - Publication Year :
- 2008
-
Abstract
- Advanced lithography optical proximity correction (OPC) techniques rely on accurately tuned process models. Although through-process OPC models are being used for critical layers at the 65-nm node, typically an initial model is created at a single optimized process setting. Such "best condition" models often produce process-window limiting structures that can impact yield. A new methodology is presented for identifying misprinted structures during the qualification of a new photomask and optimizing the process model based on those structures. Instead of the traditional approach which employs repeater analysis, the new technique bins the process-limiting structures according to their design. This method enables efficient data reduction and identification of a new feature set for lithography process model tuning. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 08946507
- Volume :
- 21
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Semiconductor Manufacturing
- Publication Type :
- Academic Journal
- Accession number :
- 34138376
- Full Text :
- https://doi.org/10.1109/TSM.2008.2001204