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A distributed MEMS phase shifter on a low-resistivity silicon substrate
- Source :
-
Sensors & Actuators A: Physical . May2008, Vol. 144 Issue 1, p207-212. 6p. - Publication Year :
- 2008
-
Abstract
- Abstract: Distributed MEMS phase shifters using CMOS-grade low-resistivity silicon have been successfully developed. Kapton films were utilized as dielectric layers to reduce RF signal attenuation in the lossy silicon substrate. The scattering parameters were evaluated from DC to 26GHz. The phase shifting reaches 43° and insertion losses are less than 1.4dB. The manufacturing process is simple and compatible with CMOS and post CMOS processes. [Copyright &y& Elsevier]
- Subjects :
- *SILICON
*NONMETALS
*RAPID prototyping
*INDUSTRIAL engineering
Subjects
Details
- Language :
- English
- ISSN :
- 09244247
- Volume :
- 144
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Sensors & Actuators A: Physical
- Publication Type :
- Academic Journal
- Accession number :
- 31923596
- Full Text :
- https://doi.org/10.1016/j.sna.2007.12.027