PRESSURE DEPENDENCE OF OPTO-ELECTRONIC PROPERTIES IN ZnSxSe1-x.

We present an investigation of the electronic properties and optical constants of zinc-blende ZnSxSe1-x semiconducting alloys at normal and under hydrostatic pressure up to 20 kbar. For this purpose, we used an empirical pseudopotential method within the virtual crystal approximation. The effects of alloy composition are taken into consideration in the calculation, which improves significantly the bandgap bowing parameters with respect to the experiment. Results regarding the composition and pressure dependences of energy bandgaps, electron valence and conduction charge distributions, optical high-frequency dielectric constant and its linear pressure coefficient are presented and discussed. The information derived from the present study may be useful for the development of opto-electronic devices that operate in the blue/green spectral range. [ABSTRACT FROM AUTHOR]