PRESSURE DEPENDENCE OF OPTO-ELECTRONIC PROPERTIES IN ZnSxSe1-x.

MLA

Benmakhlouf, F., and N. Bouarissa. “PRESSURE DEPENDENCE OF OPTO-ELECTRONIC PROPERTIES IN ZnSxSe1-X.” International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, vol. 20, no. 28, Nov. 2006, pp. 4807–20. EBSCOhost, https://doi.org/10.1142/S0217979206035655.

APA

Benmakhlouf, F., & Bouarissa, N. (2006). PRESSURE DEPENDENCE OF OPTO-ELECTRONIC PROPERTIES IN ZnSxSe1-x. International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 20(28), 4807–4820. https://doi.org/10.1142/S0217979206035655

Chicago

Benmakhlouf, F., and N. Bouarissa. 2006. “PRESSURE DEPENDENCE OF OPTO-ELECTRONIC PROPERTIES IN ZnSxSe1-X.” International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics 20 (28): 4807–20. doi:10.1142/S0217979206035655.